Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors
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Abstract
We report on the resonant, voltage tunable emission of terahertz radiation (0.4-1.0 THz) from a gated two-dimensional electron gas in a 60 nm InGaAs high electron mobility transistor. The emission is interpreted as resulting from a current driven plasma instability leading to oscillations in the transistor channel (Dyakonov-Shur instability). © 2004 American Institute of Physics.
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Knap</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Electrical, Computer and System Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12180</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">État de New York</region></placeName><wicri:cityArea>Electrical, Computer and System Engineering Department, Rensselaer Polytechnic Institute, Troy</wicri:cityArea></affiliation><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Institute of Radioengineering and Electronics, Russian Academy of Sciences, 410019 Saratov, Russia</s1></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>Institute of Radioengineering and Electronics, Russian Academy of Sciences, 410019 Saratov</wicri:regionArea><wicri:noRegion>410019 Saratov</wicri:noRegion></affiliation><affiliation wicri:level="2"><inist:fA14 i1="05"><s1>Center for Broadband Data Transport and Electrical, Computer and System Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12180</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">État de New York</region></placeName><wicri:cityArea>Center for Broadband Data Transport and Electrical, Computer and System Engineering Department, Rensselaer Polytechnic Institute, Troy</wicri:cityArea></affiliation></author><author><name sortKey="Lusakowski, J" uniqKey="Lusakowski J">J. 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The emission is interpreted as resulting from a current driven plasma instability leading to oscillations in the transistor channel (Dyakonov-Shur instability). © 2004 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>84</s2></fA05><fA06><s2>13</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors</s1></fA08><fA11 i1="01" i2="1"><s1>KNAP (W.)</s1></fA11><fA11 i1="02" i2="1"><s1>LUSAKOWSKI (J.)</s1></fA11><fA11 i1="03" i2="1"><s1>PARENTY (T.)</s1></fA11><fA11 i1="04" i2="1"><s1>BOLLAERT (S.)</s1></fA11><fA11 i1="05" i2="1"><s1>CAPPY (A.)</s1></fA11><fA11 i1="06" i2="1"><s1>POPOV (V. V.)</s1></fA11><fA11 i1="07" i2="1"><s1>SHUR (M. 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